On February 2, it was reported that third-generation semiconductor materials, represented by silicon carbide (SiC), are playing a crucial role in the transformation and upgrading of China’s manufacturing industry. According to the Institute of Microelectronics of the Chinese Academy of Sciences, China has successfully verified its first domestically produced SiC power device in space. This breakthrough in third-generation semiconductor materials is expected to drive the next generation of aerospace power systems in China.
Liu Xinyu, a researcher at the Institute of Microelectronics, explained that power devices are the core components for electric energy conversion and control, often referred to as the “heart” of power electronic systems. These devices are among the most fundamental and widely used components. As the performance of silicon-based power devices approaches its limits, third-generation semiconductor materials like SiC offer unique advantages that meet the high energy efficiency, miniaturization, and lightweight requirements of space power systems. This makes them strategically significant for the development of next-generation aerospace technologies.
Industry experts believe that the successful in-space validation of SiC power devices marks a significant step forward for China’s aerospace industry. It indicates that SiC power devices, designed for space payloads measured in grams, will play a pivotal role in upgrading space power systems. This progress is expected to provide China with the next-generation power devices needed for future lunar exploration, manned moon landings, deep space exploration, and other space missions.